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2023

  • Journal​​

  1. J. -W. Hu, P. -C. Huang, P. -W. Huang, J. -Y. Jiang, C. -F. Huang and T. -L. Wu, "Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies," in IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 2175-2178, April 2023.

  2. Yao-Luen Shen, Chih Yao Chang, Po-Liang Chen, Cheng-Chan Tai, Tian-Li Wu, Yuh-Renn Wu, Chih-Fang Huang, "Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT," Micromachines, vol. 14, Issue 2, no. 423, 2023.

  3. Ya-Xun Lin, Der-Sheng Chao, Jenq-Horng Liang, Jheng-Yi Jiang, Chih-Fang Huang, "Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation," Microelectronics Reliability, vol. 142, pp. 114927, 2023.

  4. Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Jia-Wei Hu, Chih-Fang Huang, "High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow VGS (on)," Key Engineering Materials, vol. 948, pp. 89-93, 2023.

  5. Ya-Xun Lin, Der-Sheng Chao, Jenq-Horng Liang, Yao-Luen Shen, Chih-Fang Huang, Steve Hall, Ivona Z Mitrovic, "Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height," Solid-State Electronics, vol.207, pp. 108723, 2023.

  6. Shih-Hsuan Chen, Chih-Lun Liu, Chien-Neng Huang, Hsiang-Min Hsieh, Ping-Kai Chang, Ruei-Ci Wu, Kung-Yen Lee, Chih-Fang Huang, "Modulation of Ciss of a 4H-SiC Planar MOSFET with a Shorter Sidewall and a Thicker Gate," IEEE Electron Device Letters, Vol. 44, No. 11, pp. 1825-1828, Nov. 2023.

  • Conference

  1. Yao-Luen Shen, Yen-Ya Wang, Wen-Yun He and Chih-Fang Huang, "Improvement of Optical Characteristic of Light-Emitting HEMT with Single Quantum Well with Low-Temperature Growth," 28th International Electron Devices and Materials Symposium (IEDMS 2023), Hsinchu, Taiwan, Oct. 2023.​

  2. J.-W. Hu, Y.-C. Chan, F.-J. Hsu, and C.-F. Huang, "Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding," International Conference on Silicon Carbide and Related Materials 2023 (ICSCRM 2023), Sorrento, Italy, Sep. 2023.

  3. Fu-Jen Hsu1, Cheng-Tyng Yen, Hsiang-Ting Hung, Ting-Fu Chang, Yu-Lien Chiu, Jia-Wei Hu, Chih-Fang Huang, "A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)," 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Hsinchu, Taiwan, Aug. 2023.

  4. J.-W Hu, T.-Y. Lu, B.-R Chen, T.-L. Wu, and C.-F. Huang, "Comprehensive comparisons of performance and reliability in 4HSiC tri-gate and planar MOSFETs," 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Hsinchu, Taiwan, Aug. 2023.

2022

  • Journal

  1. Jhong-Ren Huang, Ting-Wei Chen, Jian-Wei Lee, Chih-Fang Huang, Lu-Sheng Hong, "A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodes," Materials Letters, vol. 310, pp. 131506, 2022.

  2. Chih-Yao Chang, Yao-Luen Shen, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Yuh-Renn Wu, Chih-Fang Huang, "Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted," Applied Physics Express, vol. 15, no. 11, pp. 116503, 2022.

  • Conference

  1. Yao-Luen Shen, Chih-Yao Chang, Po-Liang Chen, Cheng-Chan Tai,  Tian-Li Wu, Yuh-Renn Wu, Chih-Fang Huang, “Study on the Optical Characteristics of Light-Emitting HEMT with Different Quantum Well Locations,” in International Conference on Solid State Devices and Materials (SSDM 2022).

  2. Chih-Yao Chang, Yao-Luen Shen, Tian-Li Wu, Chih-Fang Huang, “Study of Time-Dependent Gate Breakdown on p-GaN HEMTs with Indium-Tin-Oxide Gate Electrode,” in 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), Taoyuan, Taiwan, Nov. 2022.

  3. J.-W. Hu, T.-Y. Lu, Y.-C. Huang, F.-J. Hsu, C.-F. Huang, T.-L. Wu, “Fabrication and Evaluation of Tri-gate NMOSFET in 4H-SiC,” Asia-Pacific Workshop on Widegap Semiconductors 2022 (APWS2022).

  4. J.-W. Hu, T.-Y. Lu, Y.-C. Huang, F.-J. Hsu, C.-F. Huang, T.-L. Wu, F. Zhao, “Performance and Reliability Evaluation of Tri-gate NMOSFET in 4H-SiC,” The International Conference on Silicon Carbide and Related Materials (ICSCRM 2022).

  5. Jia-Wei Hu, Hong-Wei Chen, Syue-Lun Lu, Chih-Fang Huang, “Investigation on Characteristics of 4H-SiC Double RESURF LDMOS with Different P-top Doses,” International Electron Devices & Materials Symposium 2022, IEDMS2022.

  6. Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Guan-Wei Lin, Chih-Feng Huang, Lung-Sheng Lin, I-Chi Lin, Chih-Fang Huang, Ta-Yung Yang, "A Highly Integrated Sensorless Field Oriented Control BLDC/PMSM Inverter with 99% Efficiency Enabled by an All-in-one System Integrated Full SiC Intelligent Power Module (sIPM®)," IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), pp. 176-179.

2021

  • Journal

  1. Jia-Wei Hu, Jheng-Yi Jiang, Wei-Chen Chen, Chih-Fang Huang, Tian-Li Wu, Kung-Yen Lee, Bing-Yue Tsui, "1100 V, 22.9 mΩ cm² 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation," in IEEE Transactions on Electron Devices, vol. 68. no. 10, pp. 5009-5013, Oct. 2021.

  2. Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang, "Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias," in IEEE Journal of the Electron Devices Society, vol. 9, pp. 687-690, 2021.

  3. Chen, Chia-Yuan, Yun-Kai Lai, Kung-Yen Lee, Chih-Fang Huang, and Shin-Yi Huang, "Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures" Micromachines 12, no. 7: 756, 2021.

  4. Chih-Yao Chang, Chun-Ta Hsu, Yao-Luen Shen, Tian-Li Wu,Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang, "Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated With Indium-Tin-Oxide Electrodes," in IEEE Electron Device Letters, vol. 42, no. 2, pp. 144-147, Feb. 2021.

  5. Lingxi Xia, Kailin Ren, Chih-Fang Huang, Yung C Liang, "Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device," in Applied Physics Letters, vol. 118, no. 16, pp. 162104, 2021.

  6. Jheng-Yi Jiang, Chen-Xuan Tu, Jia-Wei Hu, Der-Sheng Chao, Chih-Fang Huang, "3.3 kV Class 4 H-SiC Double-Implanted MOSFET With Excellent Radiation Hardness Against Gamma Rays Using Counter-Doped Junction Termination Extension," in IEEE Electron Device Letters, vol. 42, no. 5, pp. 727-730, 2021.

  7. Jheng-Yi Jiang, Jia-Ching Hung, Kang-Min Lo, Chih-Fang Huang, Kung-Yen Lee, Bing-Yue Tsui, "Demonstration of CMOS Integration With High-Voltage Double-Implanted MOS in 4H-SiC," in IEEE Electron Device Letters, vol. 42, no. 1, pp. 78-81, 2021.

  • Conference

  1. Chih-Yao Chang, Yao-Luen Shen, Kuan-Ju Wu, Wei-Hung Kuo, Suh-Fang Lin,Tian-Li Wu, Chih-Fang Huang, "Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted," 2021 Device Research Conference (DRC), 2021, pp. 1-2.

  2. J. -W. Hu et al., "1.2 kV 4H-SiC VDMOSFETs with Si-implanted Surface: Performance Enhancement and Reliability Evaluation," 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, pp. 211-214.

  3. Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Wei-Hung Kuo, Suh-Fang Lin,Tian-Li Wu, Chih-Fang Huang, "Investigation on Forward Biased Gate Robustness of p-GaN HEMTs with an Indium-Tin-Oxide Gate Electrode," 2021 Device Research Conference (DRC), 2021, pp. 1-2.

2020

  • Journal

  1. Chih-Yao Chang, Yi-Chen Li, Kailin Ren, Yung C. Liang, and Chih-Fang Huang, “An AlGaN/GaN High Electron Mobility Transistor with a Built-in Light Emitter using Radiative Recombination of Two-dimensional Electron Gas and Holes,” IEEE J. Electron Devices Soc., vol. 8, pp. 346-349, 2020. 

  2. Jheng-Yi Jiang, Jia-Qing Hung, Pin-Wei Huang, Tian-Li Wu, and Chih-Fang Huang*, “Study on the effects of Si implantation on the interface of 4H-SiC lateral MOSFETs,” Japanese Journal of Applied Physics, Vol. 59, p. SGGD06, 2020.

  3. Jheng-Yi Jiang, Tian-Li Wu, Feng Zhao, Chih-Fang Huang*, “Numerical Study of 4H-SiC UMOSFETs with Split-Gate and P+ Shielding,” Energies, Vol.13, No. 5, p. 1122, 2020. 

  4. Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang, “Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium-Tin-Oxide Gate Electrode,” IEEE J. Electron Devices Soc, Early access, 2020. 

  5. Chia-Hui Cheng, Jun-Wei Lai, Kai-Ting Hu, Chih-Fang Huang, Feng Zhao, "On the Effects of High-K Dielectric RESURF in High-Voltage Bulk FinFETs," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 565-571, 2020.

  6. Binghao Wang, Kuan Yew Cheong, Chih-Fang Huang, Feng Zhao, "Investigation of honey as the electrolyte gate dielectrics of field effect transistors," in Microsystem Technologies, vol. 26, no. 5, pp. 1717-1720, 2020.

  • Conference

  1. Chih-Yao Chang, Kuan-Ju Wu, Ching-Yao Wang, Yao-Luen Shen, Chun-Ta Hsu, Tian-Li Wu, and Chih-Fang Huang, “The Characteristics of Light-Emitting HEMT with Single Quantum Well Inserted,” in International Conference on Solid State Devices and Materials (SSDM 2020).

  2. F. -J. Hsu et al., "Radiation Influence Comparison between SiC JMOS and DMOS," 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, pp. 146-149.

  3. F. -J. Hsu et al., "Design Consideration of Low Capacitance SiC JMOS for Adapting High-Speed Operation," 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, pp. 122-125.

2019

  • Journal

  1.  Kailin Ren, Yung C Liang, Chih-Fang Huang, “Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/GaN high electron mobility transistors,” Applied Physics Letters, Vol. 115, p. 262101, 2019.

  2. Feng Zhao, Oliver Amnuayphol, Kuan Yew Cheong, Yew Hoong Wong, Jheng-Yi Jiang, Chih-Fang Huang, “Post Deposition Annealing Effect on Properties of Y2O3/Al2O3 Stacking Gate Dielectric on 4H-SiC,” Materials Letters, Vol. 245, pp. 174-177, 2019. 

  3. Der-Sheng Chao, Hua-Yu Shih, Jheng-Yi Jiang, Chih-Fang Huang, Ching-Yu Chiang, Ching-Shun Ku, Cheng-Tyng Yen, Lurng-Sheng Lee, Fu-Jen Hsu, Kuo-Ting Chu, “Influence of Displacement Damage Induced by Neutron Irradiation on Effective Carrier Density in 4H-SiC SBDs and MOSFETs,” Japanese Journal of Applied Physics, Vol. 58, p. SBBD08, 2019. 

  • Conference

  1. Jheng-Yi Jiang, Jia-Qing Hung, Pin-Wei Huang, Tian-Li Wu, and Chih-Fang Huang, “Study on the Effects of Si Implantation on the Interface of 4H-SiC MOSFET, “2019 International Conference on Solid State Devices and Materials, Nagoya, Japan, Sep. 2019.

  2. Jheng-Yi Jiang, Chih-Fang Huang, Tian-Li Wu, and Feng Zhao, “Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures,” The 3rd Electron Devices Technology and Manufacturing (EDTM) Conference 2019, Singapore, Mar. 2019.

  3. Chih-Yao Chang, Shao-Hsiang Huang, and Chih-Fang Huang, “Enhancement-mode Light Emitting AlGaN/GaN HEMT,” in 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019), Okinawa, Japan, Nov. 2019.

  4. Chih-Yao Chang, Jun-Lin Wu, and Chih-Fang Huang, “Light Emitting Characteristics of p-GaN on Al0.32Ga0.68N/Al0.07Ga0.93N HEMT,” in 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019), Okinawa, Japan, Nov. 2019.

2018

  • Journal

  1. Chia-Hui Cheng, Chih-Fang Huang, Kung-Yen Lee, Feng Zhao, “A Novel Deep Junction Edge Termination for Superjunction MOSFETs,” IEEE Electron Device Letters, Vol. 39, No. 4, pp. 544-547, 2018. 

  2. Kailin Ren, Yung C. Liang, Chih-Fang Huang, “Compact Physical Models for AlGaN/GaN MIS-FinFET on Threshold Voltage and Saturation Current,” IEEE Transactions on Electron Devices, Vol. 65, No. 4, pp. 1348-1354, 2018.

  • Conference

  1. Chih-Yao Chang, and Chih-Fang Huang, “A Novel Light-Emitting AlGaN/GaN HEMT Structure,” The International Workshop on Nitride Semiconductors 2018, Kanazawa, Japan, Nov. 2018.

  2. Jheng-Yi Jiang, Tan-Hsi Lin, Chih-Fang Huang, Cheng-Tyng Yen, Lurng-Shehng Lee, Chien-Chung Hung, Chwan-Ying Lee, “Experimental Demonstration of 3.3kV SiC DMOSFET with Improved Junction Termination Extension Design,” International Electron Devices and Materials Symposium 2018, Keelung, Taiwan, Oct. 2018

  3. Chih-Yao Chang, Yi-Chen Li, Chih-Fang Huang, “AlGaN/GaN HEMT with Built-in Light Emitter,” 2018 International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep. 2018.

  4. Der-Sheng Chao, Hua-Yu Shih, Jheng-Yi Jiang, Chih-Fang Huang, Ching-Yu Chiang, Ching-Shun Ku, Kung-Yen Lee, “Impact of Neutron-Induced Displacement Damage on Electrical Characteristics of 4H-SiC SBDs and MOSFETs,” 2018 International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep. 2018.

  5. Wen-Bin Yeh, Yi-Che Su, Kung-Yen Lee, Chia-Hui Cheng, Chih-Fang Huang, “A Novel Design of P Implanted Regions for a Power MOSFET,” 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, Japan, Jun. 2018.

2017

  • Journal

  1. Ting-Fu Chang, Chih-Yao Chang, Chih-Fang Huang, Yung C. Liang, Ganesh S. Samudra and Ray-Ming Lin, “Study on Trapping Effects in AlGaN/GaN-on-Si Devices with Vertical Interconnect Structures,” ECS Journal of Solid State Science and Technology, Volume 6, Issue 11, S3052-S3055, 2017.

  2. Colton Wells, Jheng-Yi Jiang, Ting-Fu Chang, Chih-Fang Huang, Jiaxin Ke, Weijun Luo, Guangrui Xia, Kuan Yew Cheong, Feng Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures,” Materials Letters, Vol. 191, pp.196-199, 2017

  • Conference

  1.  J.-Y. Jiang, C.-F. Huang, T.-L. Wu, F. Zhao, and K.-Y. Lee, “Split-Gate Assisted 4H-SiC UMOSFET,” 2017 Electron Devices and Solid-StateCircuits (EDSSC), Hsinchu, Taiwan. Oct. 2017

  2. Chia-Hui Cheng, Chih-Fang Huang, Kung-Yen Lee, “A Novel Edge Termination Design for Superjunction VDMOS,” 2017 International Conference on Solid State Devices and Materials, Sendai, Japan. Sep. 2017

  3. J.-Y. Jiang, T.-H, Lin, C.-F. Huang, C.-T. Yen, L.-S. Lee, C.-C. Hung, C.-Y. Lee, F. Zhao, and K.-Y. Lee, “Demonstration of 3.3kV class SiC DMOSFET with CD-JTE,” The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), Washington DC, USA. Sep. 2017

2016

  • Journal

  1. Kuo-Hsuan Lo, Chien-Hao Huang, Wu-Te Weng, Tsung-Yi Huang, Hung-Der Su, Jeng Gong, Chih-Fang Huang, “Ultra-Low Capacitance Transient Voltage Suppressor Design,” IEEE Transactions on Electron Devices, Vol. 63, No. 8, pp. 3064 – 3068, 2016. 

  2. Chih-Fang Huang, Jiuyang Zhou, Chia-Hui Cheng, and Feng Zhao, ”A Comprehensive Analytical Study on Dielectric Modulated Drift Regions-Part II: Switching Performances,” IEEE Transactions on Electron Devices, Vol. 63, No. 6, pp. 2261-2267, 2016.

  3. Jiuyang Zhou, Chih-Fang Huang, Chia-Hui Cheng, and Feng Zhao, “A Comprehensive Analytical Study on Dielectric Modulated Drift Regions-Part I: Static Characteristics,” IEEE Transactions on Electron Devices, Vol. 63, No. 6, pp 2255-2260, 2016. 

  4. Yun-Hsiang Wang,Yung C. Liang, Ganesh S. Samudra, Chih-Fang Huang, Wei-Hung Kuo, and Guo-Qiang Lo, “The Physical Mechanism on the Threshold Voltage Temperature Stability Improvement for GaN HEMTs with Prefluorination Argon Treatment,” Applied Physics Letters, Vol. 108, p.233507, 2016.

  5. Ting-Jung Kuo, Kung-Yen Lee, Chien-Kang Huang, Jau-Horng Chen, Wei-Li Chiu, Chih-Fang Huang, Shuen-De Wu, “State of Charge Modeling of Lithium-Ion Batteries Using Dual Exponential Functions,” Journal of Power Sources, Vol. 315, pp. 331-338, 2016.

  6. Yun-Hsiang Wang, Yung C Liang, Ganesh S Samudra, Po-Ju Chu, Ya-Chu Liao, Chih-Fang Huang, Wei-Hung Kuo and Guo-Qiang Lo, “High temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs,” Semiconductor Science and Technology, Vol. 31, p. 025004, 2016 

  7. Hung Nguyen, Chih-Fang Huang, Weijun Luo, Guangrui (Maggie) Xia, Zhiqiang Chen, Zhiqiang Li, Christopher Raymond, David Doyle, Feng Zhao, “Synthesis of Large-Scale 2-D MoS2 at. Layers by Hydrogen-Free and Promoter-Free Chemical Vapor Deposition,” Materials Letters, Vol. 168, pp. 1-4, 2016 

  8. Yun-Hsiang Wang, Yung C Liang, Ganesh S Samudra, Po-Ju Chu, Ya-Chu Liao, Chih-Fang Huang, Wei-Hung Kuo and Guo-Qiang Lo, “High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs,” Semiconductor Science and Technology, Vol. 31, p. 025004, 2016 

  9. Allen V. Lim, Tutku Karacolak, Jheng-Yi Jiang, Chih-Fang Huang, and Feng Zhao, “Electrostatically- Actuated 4H-SiC In-plane and Out-of-plane High Frequency MEMS Resonator”, IEEE Microwave and Wireless Components Lett., vol. 26, no. 1, pp. 28-30, 2016

  • Conference

  1. Chih-Yao Chang, Po-Ju Chu, Ting-Fu Chang, and Chih-Fang Huang, “AlGaN/GaN Schottky Barrier Diode with Vertical Contact Electrode Structure,” International Electron Devices and Materials Symposium, Taipei, Taiwan, November 24-25, 2016.

  2. Kailin Ren, Yung C. Liang, Chih-Fang Huang,” Physical Mechanism of Fin-Gate AlGaN/GaN MIS-HEMT: Vth Model,” 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Arkansas, USA, November 7-9, 2016

  3. Chien-Hao Huang, Tsung-Yi Huang, Chih-Fang Huang, Chia-Hui Cheng, Ching-Yao Yang,  Huan Huan-Ping, Kuo -Hsuan Lo, Tsung-Ying Tsai, Hung-Der Su, Jeng Gong, Feng Zhao,” Performance Enhancement of Bipolar Devices with Slot Pattern RESURF Approach in 40V BCD Technology,” International Conference on Solid State Devices and Materials, Tsukuba, Japan, September 19-22, 2016.

  4. Feng Zhao and Chih-Fang Huang, “Development of Single Crystalline 4H-SiC MEMS for Harsh Environments,” International Conference on Solid State Devices and Materials, Tsukuba, Japan, September 19-22, 2016.

  5. Jen-Hao Yeh, Yi-Rong Tu, Wan-Wen Tseng, Ming-Nan Chuaug, Pi-Feng Cheng, Chiung-Feng Chou, Chih-Fang Huang, “Improved Reliability of High-Voltage VDMOS with Reduced Mask Layers through Optimized Edge Termination,” 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 3-5 August,, 2016.

2015

  • Journal

  1. Jheng-Yi Jiang, Hua-Chih Hsu, Kuan-Wei Chu, Chih-Fang Huang, and Feng Zhao, “Experimental Study of Counter-Doped Junction Termination Extension for 4H–SiC Power Devices,” IEEE Electron Device Letters, Vol. 36, No. 7, pp. 699-701, 2015 

  2. Jiuyang Zhou, Chih-Fang Huang, and Yen-Hsin Chen, “Theoretical Analysis of Dielectric Modulated Drift Region for Si Power Devices,” IEEE Electron Device Letters, Vol. 36, No. 4, pp. 378-380, 2015 

  3. Yun-Hsiang Wang, Yung C. Liang, Ganesh S. Samudra, Huolin Huang, Bo-Jhang Huang, Szu-Han Huang, Ting-Fu Chang, Chih-Fang Huang, Wei-Hung Kuo, and Guo-Qiang Lo, “6.5V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor-HEMT using Multi-Layer Fluorinated Gate Stack,” IEEE Electron Device Letters, Vol. 36, No. 4, pp. 381-383, 2015 

  4. Da-Cheng Huang, Jeng Gong, Chih-Fang Huang, Steve S Chung, “Impact of the TiN Barrier Layer on the Positive Bias Temperature Instabilities of High-k/Metal-Gate Field Effect Transistors,” Japanese Journal of Applied Physics, Vol. 54, No. 4, p. 04DA01, 2015 

  5. Chih-Fang Huang, Ting-Fu Chang, Yun-Hsiang Wang, Yung C Liang, “The Stability of High Voltage AlGaN/GaN HEMTs,” ECS Transactions, Vol. 66, No. 7, pp. 127-137, 2015. (Invited)

  6. Ting-Fu Chang, Chih-Fang Huang, Tsung-Yu Yang, Chien-Wei Chiu, Tsung-Yi Huang, Kung-Yen Lee, and Feng Zhao, “Low Turn-on Voltage Dual Metal AlGaN/GaN Schottky Barrier Diode,” Solid State Electronics, Vol. 105, pp. 12–15, 2015. 

  7. Chih-Fang Huang, Hua-Chih Hsu, Kuan-Wei Chu, Li-Heng Lee, Min-Jinn Tsai, Kung-Yen Lee, and Feng Zhao, “Counter-Doped JTE, an Edge Termination for HV SiC Devices with Increased Tolerance to the Surface Charge,” IEEE Transactions on Electron Devices, Vol. 62, No. 2, pp. 354-358, 2015. 

  8. Ting-Fu Chang, Tsung-Chieh Hsiao, Chih-Fang Huang, Wei-Hung Kuo, Suh-Fang Lin, Ganesh S. Samudra, and Yung C. Liang, “Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs,” IEEE Transactions on Electron Devices, Vol. 62, No. 2, pp. 339-345, 2015. 

  • Conference

  1. Jheng-Yi Jiang, Ting-Fu Chang, and Chih-Fang Huang, “A Novel Implant Masking Processes for Double Self-Aligned 4H-SiC DMOSFETs,” The 11th IEEE International Conference on Power Electronics and Drive Systems, Sydney, Australia, June 9-12, 2015. (EI), Best Paper Award.

  2. Ting-Fu Chang, Tsung-Chieh Hsiao, Szu-Han Huang, Chih-Fang Huang, Yun-Hsiang Wang, Ganesh S. Samudra, and Yung C. Liang, “Threshold Voltage Instability in AlGaN/GaN HEMTs,” The 11th IEEE International Conference on Power Electronics and Drive Systems, Sydney, Australia, June 9-12, 2015. (EI)

  3. Yun-Hsiang Wang, Yung C Liang, Ganesh S Samudra, Bo-Jhang Huang, Ya-Chu Liao, Chih-Fang Huang, Wei-Hung Kuo, Guo-Qiang Lo, “High output swing monolithic inverter with ED mode MIS-HEMTs for GaN power integrated circuits,” The 11th IEEE International Conference on Power Electronics and Drive Systems, Sydney, Australia, June 9-12, 2015. (EI)

  4. Tsung-Yi Huang, Chien-Hao Huang, Chih-Fang Huang, Ching-Yao Yang, Wang-Chi Vincent Yeh, Huang-Ping Chu, Chien-Wei Chiu, Kuo-Hsuan Lo, Hung-Der Su, Jing-Meng Liu, Jeng Gong “Demonstration of a HV BCD technology with LV CMOS process,” International Symposium on Power Semiconductor Devices and ICs, Hong Kong, China, May 10-14, 2015. (EI)

2014

  • Journal

  1. Feng Zhao, Wei Dua, Chih-Fang Huang , “Fabrication and characterization of single-crystal 4H-SiC microactuators for MHz frequency operation and determination of Young’s modulus,” Microelectronic Engineering, Vol. 129, pp. 53–57. 2014. 

  2. Chung-Yu Hung, Tzu-Cheng Kao, Jian-Hsing Lee, Jeng Gong, Kuo-Hsuan Lo, Hung-Der Su, and Chih-Fang Haung, “Improving the ESD Robustness of a JBS Diode using a Embedded PNP BJT,” IEEE Electron Device Letters, Vol. 35, No. 10, pp.1052-1054, 2014 

  3. Jimmy C. Hsu, Jeng Gong, and Chih-Fang Huang, “An Automated Permuting Capacitor Device for Calibration of IVDs,” IEEE Transactions on Instrumentation and Measurement, Vol. 63, No. 9, pp. 2271-2278, 2014. 

  4. Liao, S. Y.; Lu, C. C.; Chang, T.; Huang, C. F.; Cheng, C. H.; Chang, L. B., “Gate Length Scaling Effect on High-Electron Mobility Transistors Devices Using AlGaN/GaN and AlInN/AlN/GaN Heterostructures,” Journal of Nanoscience and Nanotechnology, Vol. 14 No. 8 pp. 6243-6246, 2014. 

  5. Huolin Huang, Yung C. Liang, Ganesh S. Samudra, Ting-Fu Chang, and Chih-Fang Huang , “Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs,” IEEE Transactions  on Power Electronics, Vol. 29, No. 5, pp 2164-2173, 2014. 

  6. Chung-Yu Hung, Tzu-Cheng Kao, Jian-Hsing Lee, Jeng Gong, TsungYi Huang, Hung-Der Su, Kuo-Cheng Chang, Chih-Fang Huang, Kuo-Hsuan Lo, “Simple Scheme to Increase Hold Voltage for Silicon-Controlled Rectifier,” Electronics Letters, Vol. 50, No. 3, pp. 200, 2014. 

  • Conference

  1. Jheng-Yi Jiang and Chih-Fang Huang, “Double Self-Aligned 4H-SiC DMOSFETs,” International Electron Devices and Materials Symposium, Hualien, Taiwan, November 20-21, 2014.

  2. Ting-Fu Chang, Tsung-Chieh Hsiao, Chih-Fang Huang, Chien-Wei Chiu, Tsung-Yu Yang, Tsung-Yi Huang, Yung-Chii Liang, and Ganesh Samudra,”Observation of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs,” International Conference on Solid State Devices and Materials, Tsukuba, Japan, September 8-11, 2014.

  3. Tsung-Yi Huang, Wen-Yi Liao, Ching-Yao Yang, Chien-Hao Huang, Yeh, W.-C.V., Chih-Fang Huang, Kuo-Hsuan Lo, Chien-Wei Chiu, Tzu-Cheng Kao, Hung-Der Su, Kuo-Cheng Chang, “0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V,” International Symposium on Power Semiconductor Devices and ICs, Hawaii, USA, June 15-19, 2014. (EI)

2013

  • Journal

  1. Fu-Jen Yang, Jeng Gong, Ru-Yi Su, Chun-Lin Tsai, Hsiao-Chin Tuan, and Chih-Fang Huang, “RESURF p-n Diode With a Buried Layer, a Comprehensive Study,” IEEE Transactions on Electron Devices, Vol. 60, No. 11, pp 3835-3841, 2013. 

  2. Yun-Hsiang Wang, Yung C Liang, Ganesh S Samudra, Ting-Fu Chang, Chih-Fang Huang, Li Yuan and Guo-Qiang Lo, “Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics,”  Semiconductor Science and Technology, Vol. 28, p.125010, 2013 

  3. Kung-Yen Lee, Yu-Hao Chang, Yan-Hao Huang, Shuen-De Wu, Cheng Yueh Chung, Chih-Fang Huang, Tai-Chou Lee, “Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC,” Applied Surface Science,  Vol. 282, pp. 126-132, 2013. 

  4. Fu-Jen Yang, Jeng Gong, Ru-Yi Su, Ker-Hsiao Huo, Chun-Lin Tsai, Chih-Chang Cheng, Ruey-Hsin Liou, Hsiao-Chin Tuan, and Chih-Fang Huang “A 700-V Device in High-Voltage Power ICs With Low On-State Resistance and Enhanced SOA,” IEEE Transactions on Electron Devices, Vol. 60, No. 9, pp. 2847-2853, 2013. 

  5. Kung-Yen Lee, Yan-Hao Huang, Chih-Fang Huang, Cheng Yueh Chung, and Feng Zhao “Characterization for N- and P-type 3C-SiC on Si (100) Substrate with Thermal Anneal and Pulsed Excimer Laser Anneal,“ Applied Surface Science, Vol. 266, pp. 46-50, 2013. 

  6. Kuan-Wei Chu, Wen-Shan Lee, Chi-Yin Cheng, Chih-Fang Huang, Feng Zhao, Lurng-Shehng Lee, Young-Shying Chen, Chwan-Ying Lee, and Min-Jinn Tsai “Demonstration of Lateral IGBTs in 4H-SiC,“ IEEE Electron Device Letters, Vol. 34, No. 2, pp. 286-288, 2013. 

  • Conference

  1. Tsung-Yu Yang, Ting-Fu Chang, Chien-Wei Chiu, Tsung-Yi Huang, Hung-Der Su, Kuo-Cheng Chang and Chih-Fang Huang, ”A Low Turn-On Voltage and High Breakdown Voltage AlGaN/GaN Dual Metal Schottky Barrier Diode,” International Conference on Soild State Devices and Materials, Fukuoka, Japan, September 24-27, 2013.

  2. Yun-Hsiang Wang; Liang, Y.C. ; Samudra, G.S. ; Ting-Fu Chang ; Chih-Fang Huang ; Li Yuan ; Guo-Qiang Lo, “Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices,”ECCE Asia Downunder (ECCE Asia), Melbourne, Australia, June 3-6, 2013. (EI)

  3. Chien-hao Huang, Tsung-Yi Huang, Ching-Yao Yang, Huang-Ping Chu, Kuo-Hsuan Lo, Chung-Yu Hung, Kuo-Cheng Chang, Hung-Der Su, Chih-Fang Huang, Jeng Gong, “Using LV process to design high voltage DDDMOSFET and LDMOSFET with 3-D profile structure,” International Symposium on Power Semiconductor Devices and ICs, Kanazawa, Japan, May 26-30, 2013. (EI)

  4. Huolin Huang, Yung C. Liang, Ganesh S. Samudra, Chih-Fang Huang, “Design of Novel Normally-off AlGaN/GaN HEMTs with Combined Gate Recess and Floating Charge Structures,” The 10th IEEE International Conference on Power Electronics and Drive Systems, Kitakyushu, Japan, April 22-25, 2013. (EI)

  5. Liang, Y.C, Samudra, G.S., Huolin Huang, Chih-Fang Huang, Ting-Fu Chang, “AlGaN/GaN power HEMT devices for future energy conversion applications,” Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on, Kaoshiung, Taiwan, February 25-26, 2013. (EI)

2012

  • Journal

  1. Hsueh-Liang Chou, Jacky Ng, Ruey-Hsin Liou,, Yu Chang Jong, Hsiao-Chin Tuan, Chih-Fang, Huang, and Jeng Gong, “The Effect of Self-Heating in LDMOSFET Expansion Regime,“ IEEE Transactions on Electron Devices, Vol. 59, No. 11, pp. 3042-3047, 2012. 

  2. Da-Cheng Huang, Jeng Gong, Chih-Fang Huang, “Investigation of Positive and Negative Bias Temperature Instability of High-kappa Dielectric Metal Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors by Random Telegraph Signal,” Japanese Journal of Applied Physics, Vol. 52, No. 3, p. 036503, 2012 

  3. Feng Zhao, Farid Rahman, Mohammad M. Islam, and Chih-Fang Huang, “Experimental and Modeling Study of Optically Triggered SiC 1000 V p-i-n Diode Switches,” Applied Physics Express, Vol. 5, pp. 074201, 2012.  

  4. Chen-Liang Chu, Chih-Min Hu, Chung-Yu Hung, Jeng Gong, Chih-Fang Huang, Fei-Yun Chen, Ruey-Hsin Liou, Hsiao-Chin Tuan, “The Study of the Electro-Thermal Property of a High-Voltage Drain-Extended MOSFETs,” IEEE Transactions on Electron Devices, Vol. 59, No. 4, pp. 1149-1154, 2012. 

  5. Wen-Shan Lee, Kuan-Wei Chu, Chih-Fang Huang, Lorn-Sheng Lee, Min-Jinn Tsai, Kung-Yen Lee, and Feng Zhao, “Design and Fabrication of 4H-SiC Lateral High Voltage Devices on Semi-Insulating Substrate,” IEEE Transactions on Electron Devices, Vol. 59, No. 3, pp. 754-760, 2012. 

  6. C. –L. Chu, C. –M. Hu, J. Gong, C. –F. Huang, C. –L. Tsai, F. –Y. Chen, R. –H. Liou, and H. –C. Tuan, “Investigation of Voltage-Dependent Drift Region Resistance on High-Voltage Drain-Extended MOSFETs’ I-V Characteristics,” Electronics Letters, Vol. 48, No. 2, pp 110-111, 2012. 

  7. Chih-Min Hu, Chung-Yu Hung, Chun-Hsueh Chu, Da-Chiang Chang, Ying-Zong Juang, Jeng Gong, Chih-Fang Huang, Chih-Min Chin, “A 60-GHz three-stage low noise amplifier using 0.15-μm gallium-arsenic pseudomorphic high-electron mobility transistor technology,” Microwave and Optical Technology Letters, Vol. 54, No. 2, pp. 329-332, 2012 

  8. Chih-Min Hu, Kuo-Hsuan Lo, Chung-Yu Hung, Chun-Hsueh Chu, Da-Chiang Chang, Jih-Hsin Liu, Jeng Gong, and Chih-Fang Huang, “The Parameter Extraction including Field-Plate Effect of 0.25 μm 12 V LEMOSFETs,” Semiconductor Science and Technology, Vol. 27, pp. 015017, 2012.

  • Conference

  1. Ting-Fu Chang and Chih-Fang Huang, “Dynamic Breakdown of AlGaN/GaN HEMTs on High Resistance Si Substrate,” International Workshop on Nitride Semiconductors, Sapporo, Japan, October 14-19, 2012.

  2. Ting-Fu Chang, Huei-Hung Wang, Tsung-Yu Yang, and Chih-Fang Huang, “Gate Leakage Current of AlGaN/GaN HEMTs with Different Isolation Structures,” International Electron Devices and Materials Symposium, Kaoshiung, Taiwan, November 29-30, 2012.

  3. Wen-Shan Lee, Chi-Yin Cheng, Kuan-Wei Chu, Chih-Fang Huang, Feng Zhao,Lurng-Shehng Lee, Young-Shying Chen, Chwan-Ying Lee, and Min-Jinn Tsai, “Lateral High-Voltage 4H-SiC IGBTs,” International Conference on Sod State Devices and Materials, Kyoto, Japan, September 25-27, 2012.

  4. Chen-Liang Chu, Chih-Min Hu, Chih-Fang Huang, Fei-Yun Chen, Yi-Shen Chen, Kong-Beng Thei, C.C. Hsu, Chih-Wei Yao, Ruey-Hsin Liou, Hsiao-Chin Tuan, “Investigation of Voltage-Dependent Thermal Property in High- Voltage Drain-Extended MOSFETs, “ International Symposium on Power Semiconductor Devices and ICs, Bruges, Belgium, June 3-7, 2012. (EI)

  5. Hsueh-Liang Chou, P.C. Su, J.C.W. Ng, P.L. Wang, H.T. Lu, C.J. Lee, W.J. Syue, S.Y. Yang, Y.C. Tseng, C.C. Cheng, C.W. Yao, R.S. Liou, Y.C. Jong, J.L. Tsai, Jun Cai, H.C. Tuan, Chih-Fang Huang, Jeng Gong, ”0.18 μm BCD Technology Platform with Best-in-Class 6 V to 70 V Power MOSFETs,” International Symposium on Power Semiconductor Devices and ICs, Bruges, Belgium, June 3-7, 2012. (EI)

2011

  • Journal

  1. Chih-Min Hu, Chung-Yu Hung, Chun-Hsueh Chu, Da-Chiang Chang, Chih-Fang Huang, Jeng Gong, and Ching-Yu Chen “Design of an RF Transmit/Receive Switch using LDMOSFETs with High Power Capability and Low Insertion Loss,” IEEE Transactions on Electron Devices, Vol. 58, No. 6, pp. 1722-1727, Jun. 2011. 

  2. Wen-Shan Lee, Cheng-Wei Lin, Ming-Hsien Yang, Chih-Fang Huang, Jeng Gong, and Zhao Feng, “Demonstration of 3500 V 4H-SiC Lateral MOSFETs,” IEEE Electron Device Letters, Vol. 32, No. 3, pp. 360-362, Mar. 2011.  

  3. Ko-Tao Lee, Chih-Fang Huang, Jeng Gong, and Chia-Tien Lee, “High Performance 1 μm GaN n-MOSFET with MgO/MgO-TiO2 Stacked Gate Dielectrics,” IEEE Electron Device Letters, Vol. 32, No. 3, pp. 306-308,  Mar. 2011. 

  4. Feng Zhao, Mohammad M. Isla, and Chih-Fang Huang, “Photoelectrochemical Etching to Fabricate Single-crystal SiC MEMS for Harsh Environments,” Materials Letters, Vol. 65, No. 3, pp. 409-412, Feb. 2011.

  • Conference

  1. ​Chen-Ju Yu, Chih-Fang Huang, Po-Ju Chu, Kuan-Yu Chen, Shawn Shuo-Hung Hsu, Hsian-Chin Chiu, and Feng Zhao, “High-Voltage AlGaN/GaN HEMTs on Si Substrate with Implant Isolation,” International Conference on Sod State Devices and Materials, Nagoya, Japan, September 28-30, 2011

2010

  • Journal

  1. Feng Zhao, Mohammad M. Isla, and Chih-Fang Huang, “Study of SiO2 Encapsulation for Aluminum and Phosphorus Implant Activation in 4H-SiC,” Materials Letters, Vol. 16, No. 23, pp. 2593-2596, Dec. 2010.

  2. Jui-Min Liu, Wei-Yu Chen, Jenn-Chang Hwang, Chih-Fang Huang, Wei-Lin Wang, and Li Chang, “Growth of 3C-SiC on Si(111) using the four-step non-cooling process,” Thin Solid Films, Vol. 518, pp. 5700-5703, 2010  

  3. Ko-Tao Lee, Chih-Fang Huang, and Jeng Gong, “High Quality MgO/TiO2/MgO Nanolaminates on p-GaN MOS Capacitor,” IEEE Electron Device Letters, Vol. 31, No. 6, pp 558-560, Jun. 2010 .

  4. Wei-Yu Chen, Wei-Lin Wang, Jui-Min Liu, Chien-Cheng Chen, Jenn-Chang Hwang, Chih-Fang Huang, and Li Chang, “Crystal Quality of 3C-SiC Influenced by the Diffusion Step in the Modified Four-Step Method,” Journal of The Electrochemical Society, Vol. 157, No. 3, pp.H377-380, 2010. 

  5. Kung-Yen Lee, Shin-Yi Lee and Chih-Fang Huang, “Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth,” Material Science Forum ,Vols. 645-648, pp.123-126, 2010. 

  • Conference

  1. Wen-Shan Lee, Cheng-Wei Lin, Ming-Shien Yang, Chih-Fang Huang, Jeng Gong, and Zhao Feng, “Lateral High-Voltage 4H-SiC MOSFETs,” International Conference on Sod State Devices and Materials, Tokyo, Japan, September 22-24, 2010.

  2. Wei-Yu Chen, Jian-You Lin, Jenn-Chang Hwang, and Chih-Fang Huang, “Diffusivity of Si in the 3C-SiC Buffer Layer on Si(100) by X-ray Photoelectron Spectroscopy,” 2010 MRS Spring Meeting, San Francisco, CA, April 5-9, 2010. (EI)

2009

  • Journal

  1. Chih-Fang Huang, Cheng-Li Kan, Tian-Li Wu, Yo-Zthu Liu, Meng-Chia Lee, Kung-Yen Lee, and Feng Zhao, “3510 390 mΩ-cm2 4H-SiC Lateral JFET on a Semi-insulating Substrate,”  IEEE Electron Device Letters, Vol. 30, No. 9, pp. 957-959, 2009. 

  2. Ko-Tao Lee, Chih-Fang Huang, Jeng Gong, and Bo-Heng Liou, “Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN with Post- Metallization Annealing and (NH4)2Sx Treatments,” IEEE Electron Device Letters, Vol. 30, No. 9, pp. 907-909, 2009. 

  3. Yu-Syuan Lin, Jia-Yi Wu, Chih-Yuan Chan, Shawn S. H. Hsu, Chih-Fang Huang, and Ting-Chi Lee, “Square-Gate AlGaN/GaN HEMTs with Improved Trap-Related Characteristics,” IEEE Transaction on Electronic Devices, Vol. 52, No. 16, pp. 3207-3211, 2009. 

  4. Zhen-Yu Juang, Chih-Yu Wu, Chien-Wei Lo, Wei-Yu Chen, Chih-Fang Huang, Jenn-Chang Hwang, Fu-Rong Chen, Keh-Chyang Leou, and Chuen-Hotng Tsai, “Synthesis of Graphene on Silicon Carbide Substrates at Low Temperature,” Carbon, Vol. 47, no. 8, pp. 2026-2031, 2009. 

  5. W.-Y. Chen, C. C. Chen, J. Hwang, and C. F. Huang, “Growth of 3C-SiC on Si(100) by Low Pressure Chemical Vapor Deposition Using a Modified Four-Step Process”, Crystal Growth & Design, vol. 9, no. 6, pp. 2616-2619, 2009. 

  6. Chih-Fang Huang and Chien-Yuen Tseng, “Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs,” Material Science Forum,Vols. 600-603, pp.1163-1166, 2009. 

  • Conference

  1. Z.Y. Juang, C.Y. Wu, C.W. Lo, W.Y. Chen, C.F. Huang, J.C. Hwang, F.R. Chen, K.C. Leou, and C.H. Tsai, "Low-Temperature Synthesis of Graphene Using Silicon Carbide Substrates", E-MRS 2009 Spring Meeting, Strasbourg, France, June 8-12, 2009.

  2. Kung-Yen Lee, Gao-De Zeng, and Chih-Fang Huang, “Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth,” ICSCRM 2009, Nurrnberg, Germany, October 11-16, 2009

  3. Chih-Fang Huang, Cheng-Li Kan, Tian-Li Wu, Meng-Chia Lee, Yo-Zthu Liu, Kung-Yen Lee, and Feng Zhao, “High Voltage Lateral 4H-SiC JFETs on a Semi-insulating Substrate” 67th Device Research Conference, University Park, PA, June 22-24, 2009 (EI).

  4. Chun-Ming Hsu, Ray-Rong Lao, Jeng Gong, Chih-Fang Huang, “Response Analysis of Optically Modulated Scatterer Probes for Electromagnetic-field Measurement,” APMC 2009, Singapore, December 7-10, 2009. (EI)

2008

  • Journal

  1. Chih-Fang Huang, Jin-Rong Kuo, and Chih-Chung Tsai, “High Voltage (3130V) 4H-SiC Lateral PN Diodes on a Semi-insulating Substrate,” IEEE Electron Device Letters, Vol. 29, No. 1, pp. 83-85, 2008. 

2007

  • Journal

  1. Kung-Yen Lee, Chih-Fang Huang, Wenzhou Chen, and Michael A. Capano, “The Impact of Surface Morphology on C- and Si-Face 4H-SiC Schottky Barrier Diodes,” Physica B: Condensed Matter, Vol. 401-402, pp. 41-43, 2007. 

  • Conference

  1. Chih-Fang Huang and Chien-Yuen Tseng, “Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs,” ICSCRM 2007, Otsu, Japan, October, 2007.

2006

  • Journal

  1. Ivan Perez-Wurfl, Feng Zhao, Chih-Fang Huang, John Torvik, and Bart Van Zeghbroeck, “4H-SiC bipolar transistors with UHF and L-band operation,” Material Science Forum, Vols. 527-529, pp. 1421-1424, 2006. 

2005

  • Journal

  1. Feng Zhao, Ivan Perez, Chih-Fang Huang, John Torvik, and Bart Van Zeghbroeck, “Analysis of the Transit Times and Minority Carrier Mobility in NPN 4H-SiC Bipolar Junction Transistors,” IEEE Transaction on Electronic Devices, Vol. 52, No. 12, pp. 2541-2545, 2005. 

  • Conference

  1. Ivan Perez-Wurfl, Feng Zhao, Chih-Fang Huang, John Torvik, and Bart Van Zeghbroeck, “4H-SiC bipolar transistors with UHF and L-band operation,” ICSCRM 2005, Pittsburgh, PA, September, 2005.

  2. Feng Zhao, Ivan Perez-Wurfl, Chih-Fang Huang, John Torvik, and Bart Van Zeghbroeck, ”First Demonstration of 4H-SiC RF Bipolar Junction Transistors on a Semi-insulating Substrate with fT/fMAX of 7/5.2 GHz,” IEEE MTT-S 2005 IMS, Long Beach, CA, June 12-17, 2005. (EI)

2004​

  • Conference

  1. Chih-Fang Huang, Ivan Perez-Würfl, Feng Zhao, John Torvik, Ronda Irwin, Are Kristoffer Torvik, Fesehaye Abrhaley, and Bart Van Zeghbroeck, “215 W Pulsed Class A UHF Power Amplification Base on SiC Bipolar Technology,” 62nd Device Research Conference, South Bend, IN, June 21-23, 2004 

2003

  • Journal

  1. ​Chih-Fang Huang and James A. Cooper, Jr., “High Current Gain Bipolar Junction Transistors,” IEEE Electron Device Letters, Vol. 24, No. 6, pp.396-398, 2003. 

2002​

  • Conference

  1. Chih-Fang Huang and James A. Cooper, Jr., “4H-SiC Bipolar Junction Transistors with BVCEO > 3,200V,” International Symposium on Power Semiconductor Devices and ICs, pp.57-60, 2002. (EI)

  2. Chih-Fang Huang and James A. Cooper, Jr., “4H-SiC Power Bipolar Transistors with Common Emitter Current Gain > 50,” 60th Device Research Conference, Santa Barbara, CA, June 24-26, 2002 (EI).

  3. Chih-Fang Huang and James A. Cooper, Jr., “High Performance Power BJTs in 4H-SiC,” IEEE Lester Eastman Conference on High Performance Devices, Newark, DE, August 6 - 8, 2002. (EI)

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